Method and apparatus for insulating material using trenches

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

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257501, 257506, H01L 2900

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active

059776099

ABSTRACT:
An island of material has an insulating trench structure. The trench structure includes a first insulating trench surrounded by a second insulating trench. The trenches are joined together by at least two transverse linking trenches.

REFERENCES:
patent: 5148247 (1992-09-01), Miura et al.
patent: 5561073 (1996-10-01), Jerome et al.
patent: 5614750 (1997-03-01), Ellul et al.
patent: 5661329 (1997-08-01), Hiramoto et al.
Wolf, S., "Silicon Processing for the VLSI Era--vol. II", 1990, Lattise Press USA, pp. 45-56, Fig. 2.34 & 2.35.

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