Method and apparatus for in-situ monitoring of plasma etch...

Details Method and apparatus for in-situ monitoring of plasma etch... Method and apparatus for in-situ monitoring of plasma etch...

2006-06-27

2006-06-27

Rosenberger, Richard A. (Department: 2877)

Optics: measuring and testing

Dimension

Thickness

C250S559270, C356S072000

Reissue Patent

active

RE039145

ABSTRACT:
An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum making available to the software algorithms operable to calculate film thickness and etch and deposition rates desirable wavelengths.

REFERENCES:
patent: 4080076 (1978-03-01), Carr
patent: 4726679 (1988-02-01), McCaffrey
patent: 4968142 (1990-11-01), Manning et al.
patent: 5255089 (1993-10-01), Dybas et al.
patent: 5403433 (1995-04-01), Morrison et al.
patent: 5461236 (1995-10-01), Gram et al.
patent: 5880823 (1999-03-01), Lu
patent: 6111634 (2000-08-01), Pecen et al.

Affiliated with

Also associated with

Rating

Method and apparatus for in-situ monitoring of plasma etch... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for in-situ monitoring of plasma etch..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for in-situ monitoring of plasma etch... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3687838