Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-04-15
2008-04-15
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C216S058000, C216S041000, C216S067000, C216S074000, C216S075000, C216S079000, C156S345350, C156S345310
Reexamination Certificate
active
10821723
ABSTRACT:
Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays.
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Merry Walter R.
Shang Quanyuan
White John M.
Applied Materials Inc.
Deo Duy-Vu N.
George Patricia A.
Patterson & Sheridan LLP
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