Method and apparatus for improving the film quality of plasma en

Details Method and apparatus for improving the film quality of plasma en Method and apparatus for improving the film quality of plasma en

1996-02-09

2000-09-19

Crane, Sara

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438792, 427569, H05H 124

Patent

active

06121163&

ABSTRACT:
A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

REFERENCES:
patent: 4761219 (1988-08-01), Sasaki et al.
patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 4871416 (1989-10-01), Fukuda
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4985112 (1991-01-01), Egitto et al.
patent: 4985372 (1991-01-01), Narita
patent: 5043300 (1991-08-01), Nulman
patent: 5083865 (1992-01-01), Kinney et al.
patent: 5089441 (1992-02-01), Moslehi
patent: 5102496 (1992-04-01), Savas
patent: 5143866 (1992-09-01), Matsutani
patent: 5328555 (1994-07-01), Gupta
patent: 5427621 (1995-06-01), Gupta
patent: 5456796 (1995-10-01), Gupta et al.
patent: 5563105 (1996-10-01), Dobuzinsky et al.
Selwyn et al., "In situ Particulate Contamination in Process Plasmas", SPIE Conference Proc., pp. 1-12, (Oct. 1989).
Selwyn, "Laser Diagnostic Techniques for Reactive Ion Etching: Plasma Understanding to Process Control", J. Vac. Sci. Technol. A, vol. 6, No. 3, pp. 2041-2046, (May/Jun. 1988).
"IBM Reveals Design for Self-Cleaning Tools", Semiconductor International, p. 46 (Sep. 1991).
Selwyn et al., "In Situ Plasma Contamination Measurements by HeNe Laser Light Scattering: A Case Study", J. Vac. Sci. Technol. A, vol. 8, No. 3, p. 1726, (May/Jun. 1990).
IBM Technical Disclosure Bulletin, vol. 34, No. 11, pp. 237-238, (Apr. 1992).
Selwyn, "Plasma Particulate Contamination Control 1. Transport and Process Effects", J. Vac. Sci. Technol. B., vol. 9, No. 6, pp. 3487-3492, (Nov./Dec. 1991).
Selwyn et al., "Plasma Particulate Contamination Control: II. Self Cleaning Tool Design", Journal of Vacuum Technology A (Vacuums, Surfaces and Films), vol. 10, No. 8, pt. 1, pp. 1053-1059, (Jul. 1992).

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