Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-21
2008-11-04
Hoang, Quoc D (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21442, C257SE21661
Reexamination Certificate
active
07445980
ABSTRACT:
The present invention is a CMOS SRAM cell comprising two access devices, each access device comprised of a tri-gate transistor having a single fin; two pull-up devices, each pull-up device comprised of a tri-gate transistor having a single fin; and two pull-down devices, each pull-down device comprised of a tri-gate transistor having multiple fins. A method for manufacturing the CMOS SRAM cell, including the dual fin tri-gate transistor is also provided.
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Chau Robert S.
Datta Suman
Doyle Brian S.
Hareland Scott A.
Kavalieros Jack
Hoang Quoc D
Intel Corporation
Lane Scott M.
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