Method and apparatus for generating OPC rules for placement...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C430S005000

Reexamination Certificate

active

07614034

ABSTRACT:
A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map.

REFERENCES:
patent: 2002/0157081 (2002-10-01), Shi et al.
patent: 2004/0209170 (2004-10-01), Broeke et al.
patent: 2005/0142449 (2005-06-01), Shi et al.
patent: 2005/0142470 (2005-06-01), Socha et al.
patent: 2005/0149900 (2005-07-01), Laidig
patent: 2007/0162889 (2007-07-01), Broeke et al.
patent: 2008/0014509 (2008-01-01), Hsu et al.

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