Method and apparatus for forming thin film

Details Method and apparatus for forming thin film Method and apparatus for forming thin film

2011-03-01

2011-03-01

Nguyen, Nam X (Department: 1724)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S298230, C204S298280

Reexamination Certificate

active

07897025

ABSTRACT:
A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like is suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.

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patent: 2002180256 (2002-06-01), None
Machine Translation of JP 2002180256, Inoue et al., published Jun. 26, 2002.

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