Method and apparatus for forming resist pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430311, 430325, 430326, 430327, 430330, 430967, G03C 516

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048973378

ABSTRACT:
A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

REFERENCES:
patent: 4241165 (1980-12-01), Hughes et al.
patent: 4421844 (1983-12-01), Buhr et al.
patent: 4423137 (1983-12-01), Rester
patent: 4704348 (1987-11-01), Koizumi et al.
patent: 4717645 (1988-01-01), Kato et al.
"Resists for Fine-Line Lithography" by Michael Hatzakis; Proceedings of the IEEE, vol. 71, No. 5, May 1983, pp. 570-574.
"Integrated Circuit Fabrication Technology" by David J. Elliott McGraw-Hill Book Company, pp. 312-319.
"Prebaking Positive Photoresists" by Gordon MacBeth, Eastman Kodak Co., Interface '82, Microelectronics Seminar, San Diego, Calif., Oct. 22, 1982.
"Shipley Microposit Photoresist Technical Manual", Oct., 1982.
"Photoresist Materials and Processes" by W. S. DeForest; McGraw Hill Book Company, 1975.

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