Method and apparatus for forming insulating layer

Details Method and apparatus for forming insulating layer Method and apparatus for forming insulating layer

2005-01-25

2009-08-04

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C438S788000, C438S790000, C438S795000, C257SE21269, C257SE21274

Reexamination Certificate

active

07569497

ABSTRACT:
In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a microwave irradiation through a planar antenna member having a plurality of slits to thereby cure the film containing the organic curable material and form the insulating film having a dielectric constant of 3 or less.

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Patent Abstracts of Japan, JP 57-103333, Jun. 26, 1982.

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