Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C257SE21508
Reexamination Certificate
active
10247242
ABSTRACT:
The present invention is a method and apparatus for forming a bump for semiconductor interconnect applications, such as reverse wire bonding or stud bumping for flip chip interconnections. The bump is formed by (1) ball bonding at the bump site, (2) raising the capillary a predetermined height after forming the ball bond with the wire paying out of the capillary tip, (3) moving the capillary laterally a predetermined distance, preferably in a direction toward the site of other end of the wire loop, if the bump is to be used as the platform for a stitch bond of a wire loop, (4) raising the capillary further, and (5) moving the capillary diagonally downwardly and in the opposite direction of the first lateral motion. The wire is then severed by raising the capillary, closing the clamps and raising the capillary again to snap the wire pigtail off at the bump.
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Babinetz Stephen
Morimoto Yasuhiro
Ohtsubo Hiroyuki
Tsujimura Takashi
Kulicke and Soffa Industries Inc.
Lebentritt Michael
Roman Angel
Spletzer, Sr. Christopher M.
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