Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-08-07
2007-08-07
Ha, Nathan W. (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
Reexamination Certificate
active
10224291
ABSTRACT:
An apparatus and method for forming a layer of underfill adhesive on an integrated circuit in wafer form is described. In one embodiment, the layer of underfill adhesive is disposed and partially cured on the active surface of the wafer. Once the underfill adhesive has partially cured, the wafer is singulated. The individual integrated circuits or die are then mounted onto a substrate such as a printed circuit board. When the solder balls of the integrated circuit are reflowed to form joints with corresponding contact pads on the substrate, the underfill adhesive reflows and is completely cured. In an alternative embodiment, the underfill adhesive is fully cured after it is disposed onto the active surface of the wafer.
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Kelkar Nikhil
Mostafazadeh Shahram
Nguyen Hau T.
Nguyen Luu T.
Patwardhan Viraj A.
Beyer & Weaver, LLP
Ha Nathan W.
National Semiconductor Corporation
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