Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2005-01-04
2005-01-04
Beck, Shrive P. (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S574000, C427S578000, C427S248100, C427S255180, C427S314000, C427S397700, C118S666000, C118S725000, C438S488000
Reexamination Certificate
active
06838127
ABSTRACT:
An HSG-Si layer is formed on a wafer under a uniform temperature condition. An apparatus for forming the HSG-Si layer includes a housing forming a process chamber, a first heater on which the wafer is positioned fixed in place at the bottom of the process chamber, a second heater at the top of the process chamber, and a thermal insulator which prevents the heat generated by the first heater from being transferred to the outside of the process chamber. A temperature control system regulates the temperature of the heaters. A method of forming the HSG layer includes steps of placing the wafer on the first heater, using the heaters to remove moisture from the wafer, injecting a source gas of the HSG-Si toward the upper surface of the wafer to form amorphous silicon on the wafer, and annealing the wafer for a predetermined period of time to transform the amorphous silicon into an HSG-Si layer. During the steps of forming the HSG-Si layer, the temperatures of the first and second heaters are regulated to maintain the surface temperature of the wafer constant.
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Beck Shrive P.
Markham Wesley D.
Samsung Electronics Co,. Ltd.
Volentine Francos & Whitt PLLC
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