Method and apparatus for forming a memory structure having...

Details Method and apparatus for forming a memory structure having... Method and apparatus for forming a memory structure having...

2006-11-07

2006-11-07

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S287000, C257SE29309, C257SE21180, C257SE21679

Reexamination Certificate

active

07132336

ABSTRACT:
An improved semiconductor memory structure and methods for its fabrication are disclosed. The memory structure includes a semiconductor substrate having a dielectric region formed over a channel region. A doped region is formed between a top portion and a bottom portion of the dielectric region. This doped region includes a suitable electron affinity material. A gate electrode is connected with the top of the dielectric region. In some embodiments, suitable electron affinity materials are introduced into the doped region using implantation techniques. In another embodiment, the electron affinity material is introduced into the doped region using plasma treatment of the dielectric region and the redeposition of additional dielectric material on top of the dielectric region and doped region.

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