Method and apparatus for forming a layer on a substrate

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419215, 20419217, 20429806, 20429811, 427569, C23C 1434

Patent

active

061396966

ABSTRACT:
A method and an apparatus for forming a layer on a substrate are disclosed. In accordance with one embodiment, a substrate (901) is placed into a chamber (30) that includes a coil (16) and a shield (14) wherein the coil and the shield are electrically isolated by an isolation/support member (32) having a first surface (321) that is substantially contiguous with a surface of the coil and having a second surface (322) that is substantially contiguous with a surface of the shield. A layer (1002, 1102) is then deposited onto the substrate (901).

REFERENCES:
patent: 3935412 (1976-01-01), McDonough et al.
patent: 5680013 (1997-10-01), Dornfest
patent: 5707498 (1998-01-01), Ngan
patent: 5716451 (1998-02-01), Hama et al.
Rossnagel et al. "Directional and Ionized Sputter Deposition for MIcroelectronics Applications", Proc. of the 3rd ISSP, Tokyo, pp. 253-260, 1995.

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