Method and apparatus for forming a high quality low...

Details Method and apparatus for forming a high quality low... Method and apparatus for forming a high quality low...

2011-07-05

2011-07-05

Cleveland, Michael (Department: 1712)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S578000, C427S579000, C427S532000, C427S533000, C427S535000, C427S248100

Reexamination Certificate

active

07972663

ABSTRACT:
A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon
itrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.

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