Method and apparatus for forming a film on a substrate

Details Method and apparatus for forming a film on a substrate Method and apparatus for forming a film on a substrate

2007-12-18

2007-12-18

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C438S788000, C438S789000

Reexamination Certificate

active

09763641

ABSTRACT:
This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to H2plasma.

REFERENCES:
patent: 3223040 (1965-12-01), Dinkelkamp
patent: 4096315 (1978-06-01), Kubacki
patent: 4793524 (1988-12-01), Starr
patent: 4822632 (1989-04-01), Williams et al.
patent: 4894254 (1990-01-01), Nakayama et al.
patent: 5095938 (1992-03-01), Garrison
patent: 5098741 (1992-03-01), Nolet et al.
patent: 5195655 (1993-03-01), Bukhman
patent: 5270267 (1993-12-01), Ouellet
patent: 5273851 (1993-12-01), Takei et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5356034 (1994-10-01), Schlumberger
patent: 5494712 (1996-02-01), Hu et al.
patent: 5534069 (1996-07-01), Kuwabara et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5620524 (1997-04-01), Fan et al.
patent: 5641559 (1997-06-01), Namiki
patent: 5730804 (1998-03-01), Gomi et al.
patent: 5786039 (1998-07-01), Brouquet
patent: 5876503 (1999-03-01), Roeder et al.
patent: 196 54 737 (1997-07-01), None
patent: 0 254 205 (1986-07-01), None
patent: 0 529 334 (1991-08-01), None
patent: 0 519 079 (1991-12-01), None
patent: 0 519 079 (1992-12-01), None
patent: 0519079 (1992-12-01), None
patent: 0 726 599 (1996-08-01), None
patent: 0 212 691 (1997-03-01), None
patent: 0 761 841 (1997-03-01), None
patent: 0 826 791 (1998-03-01), None
patent: 0 826 791 (1998-03-01), None
patent: 2108133 (1983-05-01), None
patent: 2111064 (1983-06-01), None
patent: 2220869 (1990-01-01), None
patent: 2280169 (1995-01-01), None
patent: 9-237785 (1997-09-01), None
patent: 9237785 (1997-09-01), None
patent: 10-310866 (1998-11-01), None
patent: 10310866 (1998-11-01), None
patent: WO 94/01885 (1994-01-01), None
patent: WO 96/29576 (1996-09-01), None
patent: WO 98/08249 (1998-02-01), None
patent: WO 98/23787 (1998-06-01), None
patent: WO 99/41423 (1999-08-01), None
patent: WO 99/43866 (1999-09-01), None
patent: WO 00/51174 (2000-08-01), None
patent: WO 01/01472 (2001-01-01), None
A. Grill et al., “Low Dielectric Constant Films Prepared by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane” Journal of Applied Physics, US, American Institute of Physics, New York, vol. 85, No. 6, Mar. 15, 1999, pp. 3314-3318.
Patent Abstracts of Japan, vol. 1999, No. 02, Feb. 26, 1999 & JP 10 310866 A, Nov. 24, 1998, abstract.
Akiro NARA et al., “Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O2”, Jpn. J. Appl. Phys. vol. 36 (1997) Pt. 1, No. 3B, pp. 1477-1480.

Affiliated with

Also associated with

Rating

Method and apparatus for forming a film on a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for forming a film on a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for forming a film on a substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3838699