Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1999-05-21
2000-09-26
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 81, 117 82, 117 90, 117 95, C30B 2514
Patent
active
061237671
ABSTRACT:
A liquid raw material is heated to its boiling point or higher at a vaporizer to mix the vaporized ingredient gas and a carrier gas at a mixer at predetermined concentrations. The flow of the mixed gas is adjusted while the mixed gas is heated to over its condensing point and the temperature thereof is kept. Subsequently, the mixed gas is fed to a reactor for epitaxial growth while the mixed gas is heated to over its condensing point and the temperature thereof is kept. When the temperature of a heating medium is kept constant at the vaporizer to vaporize the liquid raw material and the feeding amount of the liquid into the vaporizer is adjusted by the pressure of the gas inside the vaporizer, the liquid surface level can be controlled to be constant.
REFERENCES:
patent: 3634150 (1972-01-01), Horn
patent: 4422888 (1983-12-01), Stutius
patent: 4985281 (1991-01-01), Ahlgren
patent: 4993361 (1991-02-01), Unvala
patent: 5356673 (1994-10-01), Schmitt et al.
patent: 5685907 (1997-11-01), Fujikawa et al.
patent: 5711813 (1998-01-01), Kadoiwa et al.
Atsumi Tetsuya
Kida Sumio
Kiyama Tokuji
Kuroda Akikazu
Toyama Yoshiharu
Kunemund Robert
Mitsubishi Materials Polycrystalline Silicon Corporation
Mitsubishi Materials Silicon Corporation
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