4. Coating apparatus
  5. Gas or vapor deposition

Yoshiharu Toyama

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Method and apparatus for feeding a gas for epitaxial growth

Coating apparatus – Gas or vapor deposition
Patent

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Method and apparatus for feeding a gas for epitaxial growth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Profile ID: LFUS-PAI-P-943221

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