Method and apparatus for feeding a gas for epitaxial growth

Details Method and apparatus for feeding a gas for epitaxial growth Method and apparatus for feeding a gas for epitaxial growth

1998-05-28

2000-03-21

Silbaugh, Jan H.

Coating apparatus

Gas or vapor deposition

118726, C23C 1600

Patent

active

060398094

ABSTRACT:
A liquid raw material is heated to its boiling point or higher at a vaporizer to mix the vaporized ingredient gas and a carrier gas at a mixer at predetermined concentrations. The flow of the mixed gas is adjusted while the mixed gas is heated to over its condensing point and the temperature thereof is kept. Subsequently, the mixed gas is fed to a reactor for epitaxial growth while the mixed gas is heated to over its condensing point and the temperature thereof is kept. When the temperature of a heating medium is kept constant at the vaporizer to vaporize the liquid raw material and the feeding amount of the liquid into the vaporizer is adjusted by the pressure of the gas inside the vaporizer, the liquid surface level can be controlled to be constant.

REFERENCES:
patent: 5160542 (1992-11-01), Mihira et al.
patent: 5451258 (1995-09-01), Hillman et al.
patent: 5460654 (1995-10-01), Kikkawa et al.
patent: 5470390 (1995-11-01), Nishikawa et al.
patent: 5496408 (1996-03-01), Motoda et al.
patent: 5690743 (1997-11-01), Murakami et al.
patent: 5730804 (1998-03-01), Gomi et al.

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