Method and apparatus for fabricating silicon dioxide and silicon

Details Method and apparatus for fabricating silicon dioxide and silicon Method and apparatus for fabricating silicon dioxide and silicon

1996-03-14

1998-06-02

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, 438787, H01L 2100

Patent

active

057599238

ABSTRACT:
A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.

REFERENCES:
patent: 5456945 (1995-10-01), McMillan et al.
Marage et al., "A new route for the deposition of SiO2 sol-gel coatings," Thin Solid Films vol. 238 No. 2, pp. 218-227 Feb. 1994.
Thin Solid Films, vol. 238, No. 2, 1 Feb. 1994, Marage P. et al., "A New Route for the Deposition of SiO.sub.2 Sol-gel Coatings".
P. Marage et al.; A New Route for the Deposition of SiO.sub.2 Sol-Gel Coatings; Thin Solid Films, 238; Feb. 1, 1984, No. 2; pp. 218-227.

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