Method and apparatus for fabricating semiconductor device

Details Method and apparatus for fabricating semiconductor device Method and apparatus for fabricating semiconductor device

2007-11-06

2007-11-06

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S525000, C257SE21345

Reexamination Certificate

active

11000209

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side, forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region. In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is rotated in its wafer surface for each ion implantation.

REFERENCES:
patent: 4771012 (1988-09-01), Yabu et al.
patent: 4877962 (1989-10-01), Ohsaki et al.
patent: 2003-100902 (2003-04-01), None

Affiliated with

Also associated with

Rating

Method and apparatus for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3865557