Method and apparatus for etching surfaces with atomic fluorine

Details Method and apparatus for etching surfaces with atomic fluorine Method and apparatus for etching surfaces with atomic fluorine

1994-11-07

1997-01-28

Powell, William

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 58, 1566461, 156345, 1566431, B44C 122

Patent

active

055974953

ABSTRACT:
A method and apparatus for generating a molecular or atomic fluorine jet or beam under vacuum for etching surfaces. The apparatus uses a hollow crystalline tube preferably fabricated from a crystal of a Group II fluoride such as magnesium fluoride. A terminal portion of the tube is heated to over 1000.degree. C. and a mixture of fluorine gas and an inert carrier gas is induced under pressure into the tube. An atomic fluorine jet is emitted from the opposite end of the tube. The jet can be collimated into a beam and can be directed at masked surfaces for selective etching of the surface. The atomic fluorine source has a very high intensity resulting in rapid etching of materials and as a beam is capable of highly anisotropic etching. The jet may be primarily molecular fluorine if the tube is heated to a lower temperature.

REFERENCES:
patent: 4734152 (1988-03-01), Geis et al.
patent: 4874459 (1989-10-01), Coldren et al
patent: 4923562 (1990-05-01), Jucha et al.
Valentini et al., "Supersonic Atomic and Molecular Halogen Nozzle Beam Source", Rev. Sci. Instrum., vol. 48, No. 1, Jan. 1977, pp. 58-63.
Flamm et al., "The Reaction of Fluorine Atoms With Silicon", J. Appl. Phys., 52(5), May 1981, pp. 3633-3639.
Optovac, Inc. Brochure, 1982, pp. 5-9 to 5-12.
"Janaf Thermochemical Tables", J. Phys. Chem. Ref. Data, vol. 14, Suppl. 1, 1985, pp. 1011-1012.
Stinespring et al., "An Ultrahigh Vacuum Compatible Fluorine Atom Source For Gas-Surface Reaction Studies", J. Vac. Sci. Technol., vol. 4, No. 4, Jul./Aug. 1986, pp. 1946-1947.
Geis et al., "Hot Jet Etching of GaAs and Si.sup.a) ", J. Vac. Sci. Technol., B 4(1), Jan./Feb. 1986, pp. 315-317.
Geis et al., "Hot-Jet Etching of Pb, GaAs, and Si", J. Vac. Sci. Technol., B 5(1), Jan./Feb. 1987, pp. 363-365.
Cirillo et al., "Fluorine Oxidation of Rare Earth Dopant Ions in CaF.sub.2 Single Crystals", Journal of Crystal Growth, 85 (1987) North-Holland, Amsterdam, pp. 453-460.
Atomic and Molecular Beam Methods, Edited by Giacinto Scoles, vol. 1, Oxford University Press, New York -Oxford, 1988, pp. 14-53.
Atomic and Molecular Beam Methods, Edited by Giacinto Scoles, vol. 1, Oxford University Press, New York -Oxford, 1988, pp. 83-123.
Harshaw Crystal Optics Catalogue, Englehard Corp., 1988, nine pages.
Levis et al., "A Hyperthermal 0.1-4eV) Fatom Beam Source Suitable For Surface Etching Investigations", J. Vac. Sci. Technol., A 8(4), Jul./Aug. 1990, pp. 3118-3122.
M. Faubel, et al., "A High Resolution Crossed Molecular Beam Investigation Of The Absolute Cross Sections And Product Rotational States For The Reaction F+D.sub.2 ", pp. 2106-2125.
Winters et al, "Surface Science Aspects of Etching Reactions", Surface Science Reports, North-Holland 14 (1992), pp. 161-269.

Affiliated with

Also associated with

Rating

Method and apparatus for etching surfaces with atomic fluorine does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for etching surfaces with atomic fluorine, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for etching surfaces with atomic fluorine will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-939665