Method and apparatus for etching semiconductor materials

Details Method and apparatus for etching semiconductor materials Method and apparatus for etching semiconductor materials

1989-11-22

1991-03-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156345, 20419235, 252 791, 437245, B44C 122, C23F 102, C03C 1500, C03C 2506

Patent

active

050026321

ABSTRACT:
An apparatus and method for the etching of semiconductor materials (14) is disclosed. The apparatus (10) includes a process chamber (12) having a remote generator (16) in fluid communication with the process chamber (12) for converting a noble gas (34) to a metastable gas (36). An etchant gas (40) is subsequently brought into the chamber (12) adjacent to the material (14), to mix and react with the metastable gas (36) at activation zone (38). The metastable gas (36) collides with the etchant gas (40) to cause the mixture to selectively etch the material 14.

REFERENCES:
patent: 4615756 (1986-10-01), Tsujii et al.
patent: 4668337 (1987-05-01), Sekine et al.

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