Method and apparatus for enhancing outcome uniformity of direct-

Details Method and apparatus for enhancing outcome uniformity of direct- Method and apparatus for enhancing outcome uniformity of direct-

1996-06-28

1999-09-07

Russel, Jeffrey E.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

118666, 118697, 118723E, 118724, 118725, 156345, 427573, 438710, 438715, 216 71, H01L 213065, H05H 102, H05H 124

Patent

active

059482834

ABSTRACT:
The invention provides method and apparatus that control the thermal environment of the first substrate or substrate of series of substrates treated by a uniform direct-plasma, in order to reduce first-wafer effect. By providing supplemental heat to the substrate in treatment or, equivalently, reducing the rate of heat extraction from the substrate in treatment, early in the series, the invention creates steady-state process conditions that reduce substrate-to-substrate variability in process outcome.

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Loewenstein, Lee M. et al., First-wafer effect in remote plasma processing: The stripping of photoresist, silicon nitride, and polysilicon , J. Vac. Sci. Technol. B 12(4), Jul./Aug. 1994, pp. 2810-2817.
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Stefani, Jerry, On-Line Diagnostic Monitoring of Photoresist Ashing, IEEE Transactions on Semiconductor Manufacturing, vol. 8, No. 1, Feb. 1995, pp. 2-9.
Translation of Japanese Patent Application 06-177080, Jun. 24, 1994.

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