Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-18
2006-04-18
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S286000
Reexamination Certificate
active
07029975
ABSTRACT:
A method and apparatus for coupling to a source line is disclosed. A semiconductor structure having an array of memory cells arranged in rows and columns is described. The array of memory cells includes a source region that is implanted with n-type dopants isolated between an adjoining pair of the non-intersecting STI regions and isolated from a drain region during the implantation. A source contact is located along a row of drain contacts that are coupled to drain regions of a row of memory cells and the source contact is coupled to the source region for providing electrical coupling with a plurality of source lines. The isolating of the implanted source region from the drain region during the implanting enables coupling of the source contact to the source lines while maintaining the n-type dopants between the STI regions and avoiding lateral diffusion to a bit-line.
REFERENCES:
patent: 5918125 (1999-06-01), Guo et al.
patent: 6265292 (2001-07-01), Parat et al.
patent: 6518618 (2003-02-01), Fazio et al.
Chang Kuo-Tung
Fang Shenqing
Fastenko Pavel
Mizutani Kazuhiro
Advanced Mirco Devices, Inc.
Chaudhari Chandra
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