Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2005-06-07
2005-06-07
Mills, Gregory (Department: 1763)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C118S728000, C156S345540
Reexamination Certificate
active
06902682
ABSTRACT:
An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.
REFERENCES:
patent: 4184188 (1980-01-01), Briglia
patent: 4298443 (1981-11-01), Maydan
patent: 4384918 (1983-05-01), Abe
patent: 4431473 (1984-02-01), Okano et al.
patent: 4931135 (1990-06-01), Horiuchi et al.
patent: 5092729 (1992-03-01), Yamazaki et al.
patent: 5179498 (1993-01-01), Hongoh et al.
patent: 5304249 (1994-04-01), Chosa
patent: 5310453 (1994-05-01), Fukasawa et al.
patent: 5366585 (1994-11-01), Robertson et al.
patent: 5399387 (1995-03-01), Law et al.
patent: 5413360 (1995-05-01), Atari et al.
patent: 5458687 (1995-10-01), Shichida et al.
patent: 5531835 (1996-07-01), Fodor et al.
patent: 5547539 (1996-08-01), Arasawa et al.
patent: 5558717 (1996-09-01), Zhao et al.
patent: 5790365 (1998-08-01), Shel
patent: 5874361 (1999-02-01), Collins et al.
patent: 5897711 (1999-04-01), Denison
patent: 5900062 (1999-05-01), Loewenhardt
patent: 5904779 (1999-05-01), Dhindsa
patent: 5906684 (1999-05-01), Tamura et al.
patent: 5910338 (1999-06-01), Donde
patent: 5933314 (1999-08-01), Lambson et al.
patent: 6001432 (1999-12-01), Yamazaki et al.
patent: 6028762 (2000-02-01), Kamitani
patent: 6069785 (2000-05-01), Ha
patent: 6099697 (2000-08-01), Hausmann
patent: 6177023 (2001-01-01), Shang et al.
patent: 0644578 (1995-03-01), None
patent: 6112303 (1994-04-01), None
patent: 6244147 (1994-09-01), None
Gardner James T.
Law Kam S.
Robertson Robert McCormick
Shang Quanyuan
Applied Materials Inc.
Crowell Michelle
Dugan & Dugan
Mills Gregory
LandOfFree
Method and apparatus for electrostatically maintaining... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for electrostatically maintaining..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for electrostatically maintaining... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3486318