Method and apparatus for dry etching

Details Method and apparatus for dry etching Method and apparatus for dry etching

1993-03-18

1994-06-07

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156650, 156651, 156657, 1566591, 156662, 156345, 156626, H01L 21306, B44C 122, C03C 1500

Patent

active

053186672

ABSTRACT:
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameter for controlling the first and second conditions are contemplated.

REFERENCES:
patent: 5242539 (1993-09-01), Kumihashi et al.
Abstract Nos. 26p-ZF-1, 26p-ZF-4, 28p-ZF-9, 51st Japan Society of Applied Physics Autumn Meeting, 1990, pp. 462-463.
Arikado et al, "Al Tapered Etching Technology Using 10.sup.-3 Torr Magnetron Discharge Reactive Ion Etching," Proceedings of Symposium on Dry Process, 1986, pp. 48-52.
Kimura et al, "Local Etched Profile Anomaly in ECR Prasma Etching", The Electrochemical Society Spring Meeting, 1991, Extended Abstracts, 91-1, pp. 670-671.

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