Method and apparatus for detecting planarization of metal...

Details Method and apparatus for detecting planarization of metal... Method and apparatus for detecting planarization of metal...

2003-06-27

2008-08-19

Ahmed, Shamim (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S013000, C216S038000, C216S088000, C451S005000

Reexamination Certificate

active

07413988

ABSTRACT:
A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

REFERENCES:
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patent: 5499733 (1996-03-01), Litvak
patent: 6010538 (2000-01-01), Sun et al.
patent: 6563308 (2003-05-01), Nagano et al.
patent: 6602724 (2003-08-01), Redeker et al.

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