Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1990-11-26
1991-09-10
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250397, 2504923, H01J 37244
Patent
active
050476483
ABSTRACT:
A method for detecting particles in an ion implantation characterized by the steps of placing a particle sensor within the vacuum chamber of the ion implantation machine, exposing the substrate to an ion beam, thereby dislodging a stream of free particles, and detecting a portion of the free particle sensor. The particle sensor is preferably shielded from radiation to prevent false readings, and is positioned substantially along the plane of rotation of a substrate support wheel. By positioning the particle counter both along the plane of rotation and tangential to the rotation of the wheel at the point of ion impact, the particle counter intercepts the particle stream at the point of maximum particle flux. The apparatus includes a laser beam, a photodetector responsive to a portion of the laser beam scattered off of particles in the particle stream and a lead shield to shield the photodetector from x-rays generated within the vacuum chamber of the ion implantation machine.
REFERENCES:
patent: 4733091 (1988-03-01), Robinson
patent: 4804853 (1989-02-01), Borden
patent: 4910399 (1990-03-01), Taira et al.
patent: 4931650 (1990-06-01), Lowe et al.
W. Weisenberger et al., Real-Time In-Situ Particle Monitoring in a High Current Ion Implantation Production Bay, Nuclear Instruments and Methods in Physics Research B37/38 (1989) pp. 644-648.
"PM-100 In-Situ Particle Flux Monitor", High Yield Technology, Inc.
"In-Situ Particle Monitoring in the Varian 120-10, End Station", by Vanmoorleghem et al.
Current Michael
Fishkin Boris
Applied Materials Inc.
Berman Jack I.
Hickman Paul L.
Nguyen Kiet T.
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