Method and apparatus for deposition of low dielectric...

Details Method and apparatus for deposition of low dielectric... Method and apparatus for deposition of low dielectric...

2006-03-07

2006-03-07

Zervigon, Ruby (Department: 1763)

Coating apparatus

Gas or vapor deposition

C156S345330, C156S345340

Reexamination Certificate

active

07008484

ABSTRACT:
A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.

REFERENCES:
patent: 4262631 (1981-04-01), Kubacki
patent: 4532150 (1985-07-01), Endo et al.
patent: 4634601 (1987-01-01), Hamakawa et al.
patent: 4759947 (1988-07-01), Ishihara et al.
patent: 5024748 (1991-06-01), Fujimura
patent: 5238866 (1993-08-01), Bolz et al.
patent: 5465680 (1995-11-01), Loboda
patent: 5685914 (1997-11-01), Hills et al.
patent: 5711987 (1998-01-01), Bearinger et al.
patent: 5728223 (1998-03-01), Murakami et al.
patent: 5730792 (1998-03-01), Camilletti et al.
patent: 5776235 (1998-07-01), Camilletti et al.
patent: 5780163 (1998-07-01), Camilletti et al.
patent: 5818071 (1998-10-01), Loboda et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6072227 (2000-06-01), Yau et al.
patent: 6132512 (2000-10-01), Horie et al.
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6287990 (2001-09-01), Cheung et al.
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6454860 (2002-09-01), Metzner et al.
patent: 6627532 (2003-09-01), Gaillard et al.
patent: 0 613 179 (1994-08-01), None
U.S. Appl. No. 09/247,381, filed, Feb. 19, 2002, Cheung et al.
U.S. Appl. No. 09/338,470, filed, Jul. 2, 2002, Moghadam et al.
U.S. Appl. No. 09/370,371, filed, Jan. 28, 2003, Yau et al.
U.S. Appl. No. 09/465,233, filed Jan. 28, 2003, Yau et al.
U.S. Appl. No. 09/477,126, filed Dec. 30, 1999, Yau et al.
U.S. Appl. No. 09/553,461, filed Jul. 15, 2003, Huang et al.
U.S. Appl. No. 09/580,505, filed Mar. 25, 2003, Cheung et al.
U.S. Appl. No. 09/594,186, filed May 13, 2003, Cheung et al.
U.S. Appl. No. 09/594,187, filed Apr. 1, 2003, Cheung et al.
U.S. Appl. No. 09/957,551, filed Sep. 19, 2001, Cheung et al.
U.S. Appl. No. 09/957,681, filed Sep. 19, 2001, Cheung et al.
Xia, et al., “Silicon Carbide Cap Layers for Low Dielectric Constant Silicon Oxide Layers,” Filed Mar. 28, 2001, U.S Appl. 09/820,439.

Affiliated with

Also associated with

Rating

Method and apparatus for deposition of low dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for deposition of low dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for deposition of low dielectric... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3525047