Method and apparatus for depositing dielectric films

Details Method and apparatus for depositing dielectric films Method and apparatus for depositing dielectric films

2005-09-20

2005-09-20

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C204S192100

Reexamination Certificate

active

06946408

ABSTRACT:
A method of depositing a dielectric film, such as tantalum oxide, on a substrate is described. In one example, a substrate is placed in a process zone to face a metal target and a pulsed DC voltage is applied to the target. A sputtering gas comprising a non-reactive component and an oxygen-containing component is introduced to the process zone in a volumetric flow ratio selected to achieve the desired x and y values in the deposited dielectric film, for example, in the deposition of a non-stoichiometric TaxOyfilm or in the deposition of a tantalum oxide film in which the oxidation state of tantalum is less than +5. The sputtering gas is removed from the process zone by condensing at least some of the non-reactive component on a cooled surface external to the process zone, and exhausting at least some of the oxygen-containing component from the process zone with moving rotors. A multiple layer dielectric film having different stoichiometric ratios in the layers can also be deposited by the instant method.

REFERENCES:
patent: 5942089 (1999-08-01), Sproul et al.
patent: 5977582 (1999-11-01), Fleming et al.
patent: 6187682 (2001-02-01), Denning et al.
patent: 6315873 (2001-11-01), Lowe et al.
patent: 6337151 (2002-01-01), Uzoh et al.
patent: 6413858 (2002-07-01), Chopra
patent: 6475854 (2002-11-01), Narwankar et al.
patent: 6537428 (2003-03-01), Xiong et al.
patent: 6677254 (2004-01-01), Narwankar et al.
patent: 6679976 (2004-01-01), Baldwin et al.
patent: 6750156 (2004-06-01), Le et al.
patent: 6872322 (2005-03-01), Chow et al.
patent: 2002/0075631 (2002-06-01), Singh et al.
patent: 2003/0035906 (2003-02-01), Memarian et al.
patent: 2003/0056619 (2003-03-01), Kumar et al.
patent: 2003/0124748 (2003-07-01), Summerfelt et al.
patent: 2003/0175142 (2003-09-01), Milonopoulou et al.
Christensen, De Reus, Bouwstra: Tantalum oxide thin films as protective coatings for sensors; proceedings from Micro Electro Mechanical Systems IEEE Int'l Conference; Jan. 17, 1999; Lake Buena Vista, Florida.

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