Method and apparatus for depositing deep UV photoresist films

Details Method and apparatus for depositing deep UV photoresist films Method and apparatus for depositing deep UV photoresist films

1996-11-08

1999-03-23

Nguyen, Nam

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430298, 522172, 427489, G03C 500

Patent

active

058857516

ABSTRACT:
An improved method and apparatus for forming a plasma-polymerized methylsilane (PPMS) photo-sensitive resist material includes the steps of pressurizing the chamber to between about 1 to about 2 Torr, heating the substrate to between about 50.degree. C. and about 200.degree. C., and plasma-polymerizing the precursor methylsilane gas to deposit a stable film having high-photosensitivity at high deposition rates.

REFERENCES:
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5093153 (1992-03-01), Brochot et al.
patent: 5318877 (1994-06-01), Ober et al.
patent: 5346803 (1994-09-01), Crivello et al.
patent: 5355832 (1994-10-01), Loh et al.
patent: 5439780 (1995-08-01), Joshi et al.
patent: 5487967 (1996-01-01), Hutton et al.
patent: 5558717 (1996-09-01), Zhao et al.
patent: 5569497 (1996-10-01), Verzaro et al.
patent: 5635338 (1997-06-01), Joshi et al.
Journal of Photopolymer Science and Technology, vol. 8, No. 4 (1995) pp. 679-686 "All Dry Lithography: Applications of Plasma Polymerized Methylsilane as a Single Layer Resist and Silicon Dioxide Precursor"; T.W. Weidman, O. Joubert, A.M. Joshi, J.T-C Lee, D. Boulin, E.A. Chandross, R. Cirelli, F. P. Klemens, H.L. Maynard and V.M. Donnelly.
Applied Physics Letters, vol. 62, No. 4, Jan. 25, 1993, "New Photodefinable Glass Etch Masks for Entirely Dry Photolithography: Plasma Deposited Organosilicon Hydride Polymers", Timothy W. Weidman and Ajey M. Joshi.

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