Method and apparatus for depositing deep UV photoresist films

Details Method and apparatus for depositing deep UV photoresist films Method and apparatus for depositing deep UV photoresist films

1998-10-01

2000-07-18

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430298, 522172, 427489, G03C 500

Patent

active

060905301

ABSTRACT:
An improved method and apparatus for forming a plasma-polymerized methylsilane (PPMS) photo-sensitive resist material includes the steps of pressurizing the chamber to between about 1 to about 2 Torr, heating the substrate to between about 50.degree. C. and about 200.degree. C., and plasma-polymerizing the precursor methylsilane gas to deposit a stable film having high-photosensitivity at high deposition rates.

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T.W. Weidman et al., "New Photodefinable Glass Etch Masks for Entirely Dry Photolithography: Plasma Deposited Organosilicon Hydride Polymers," Applied Physics Letters, vol. 62, No. 4, pp. 372-374 (Jan. 1993).
T.W. Weidman et al., "All Dry Lithography: Applications of Plasma Polymerized Methylsilane as a Single Layer Resist and Silicon Dioxide Precursor," Journal of Photopolymer Science and Technology, vol. 6, No. 4, pp. 679-686 (1995).

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