Method and apparatus for creating strong interface between in-si

Details Method and apparatus for creating strong interface between in-si Method and apparatus for creating strong interface between in-si

1997-07-08

1998-09-29

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272553, 438788, 438789, 438790, 438784, 438763, H05H 1400, H01L 2100, B05D 300

Patent

active

058143777

ABSTRACT:
A method and apparatus for ramping down the deposition pressure in a SACVD process. The present invention also provides a method and apparatus for subsequently ramping up the pressure for a PECVD process in such a manner as to prevent unwanted reactions which could form a weak interlayer interface. In particular, the deposition pressure in the SACVD process is ramped down by stopping the flow of the silicon containing gas (preferably TEOS) and/or the carrier gas (preferably helium), while diluting the flow of ozone with oxygen. A ramp down of the pressure starts at the same time. The diluting of the ozone with oxygen, limits reactions with undesired reactants at the end of a process.

REFERENCES:
patent: 4260647 (1981-04-01), Wang et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5286518 (1994-02-01), Cain et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5362526 (1994-11-01), Wang et al.
patent: 5393708 (1995-02-01), Hsia et al.
patent: 5426076 (1995-06-01), Moghadam
patent: 5502006 (1996-03-01), Kasagi
patent: 5593741 (1997-01-01), Ikeda
patent: 5626924 (1997-05-01), Ishikawa
patent: 5629245 (1997-05-01), Inushima et al.
McInerney et al., "A Planarized Si0.sub.2 Interlayer Dielectric With Bias-CVD", I.E.E.E. Transactions on Electron Devices ED-34 (1987) Mar. No. 3, pp. 615-620.
Chanana et al., "Effect Of Annealing And Plasma Precleaning On the Electrical roperties of N.sub.2 0/SiH.sub.4 PECVD Oxide As Gate Material In MOSFETs and CCDs", Solid-State Electronics 36 (1993) No. 7, pp. 1021-1026.

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