Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-12-28
2010-11-16
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S185090, C365S185180, C365S185030
Reexamination Certificate
active
07835209
ABSTRACT:
A method and apparatus for controlling a reading level of a memory cell are provided. The method of controlling a reading level of a memory cell may include: receiving metric values calculated based on given voltage levels and reference levels; generating summed values for each of the reference levels by summing metric values corresponding to levels of a received signal from among the received metric values; selecting the reference level having the greatest value of the generated summed values from the reference levels; and controlling the reading level of the memory cell based on the selected reference level.
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Internation Search Report dated Apr. 14, 2008.
Korean Notice of Allowance dated May 30, 2008.
Kang Dong Ku
Kong Jun Jin
Park Sung Chung
Song Seung-Hwan
Harness & Dickey & Pierce P.L.C.
Le Toan
Nguyen Tuan T
Samsung Electronics Co,. Ltd.
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