Method and apparatus for controlling material removal from...

Details Method and apparatus for controlling material removal from... Method and apparatus for controlling material removal from...

2007-06-19

2007-06-19

Vinh, Lan (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

C216S060000, C438S014000, C438S708000

Reexamination Certificate

active

10868245

ABSTRACT:
A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

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