Method and apparatus for controlling electrostatic coupling to p

Details Method and apparatus for controlling electrostatic coupling to p Method and apparatus for controlling electrostatic coupling to p

1998-02-09

1999-12-07

Philogene, Haissa

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

315344, 31511151, 118723I, 118723R, H01J 724

Patent

active

059989319

ABSTRACT:
A plasma etching device is described which includes a planar coil electrode positioned adjacent to a dielectric structure physically separating the electrode from a reaction chamber in which a plasma is formed. The electrode presents a variable width adjacent to the dielectric structure, with the width of inner coil windings being less than the width of outer coil windings. The electrode is connected to a terminal capacitance, whose value may be varied to present different voltage amplitudes at different locations along the coil electrode. By locating the larger width coil windings near the reaction chamber walls, and by varying the capacitance value of the terminal capacitor during plasma etching processing, improved plasma ignition, etching uniformity, and contamination conditions may result.

REFERENCES:
patent: 5619103 (1997-04-01), Tobin et al.
patent: 5637961 (1997-06-01), Ishii et al.
patent: 5800619 (1998-09-01), Holland et al.

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