Method and apparatus for controlling coating thickness

Details Method and apparatus for controlling coating thickness Method and apparatus for controlling coating thickness

2005-02-01

2005-02-01

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S780000, C427S498000

Reexamination Certificate

active

06849563

ABSTRACT:
The coating thickness and uniformity of spin-on deposition layers on semiconductor wafers is controlled through the in situ control of the viscosity and homogeneity of the mixture of precursor material and solvent material. The thickness of the deposited material is selected and the viscosity required at a given spin rate for the selected thickness is automatically mixed. Sensing and control apparatus are employed to ensure that the uniformity and viscosity required is maintained before dispensing onto said semiconductor wafer. Low-K dielectric materials of selected thickness are deposited in a uniform coating.

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patent: 6066574 (2000-05-01), You et al.
patent: 6255232 (2001-07-01), Chang et al.
patent: 6376013 (2002-04-01), Rangarajan et al.
patent: 6407009 (2002-06-01), You et al.
patent: 6423380 (2002-07-01), Courtenay
patent: 8177 (1999-01-01), None

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