Method and apparatus for allowing formation of self-aligned...

Details Method and apparatus for allowing formation of self-aligned... Method and apparatus for allowing formation of self-aligned...

2007-06-12

2007-06-12

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S285000, C438S309000, C438S312000

Reexamination Certificate

active

10778525

ABSTRACT:
A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a mask for depositing the base contacts. In forming the T-top, its dimensions may be varied, thereby allowing the spacing between the base contacts and emitter to be adjusted.

REFERENCES:
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patent: 5739062 (1998-04-01), Yoshida et al.
patent: 5986326 (1999-11-01), Kato
Masuda, Hiroshi, et al., “Novel Self-Aligned Sub-micron Emitter InP/InGaAs HBT's Using T-Shaped Emitter Electrode,”1995 Conference Proceedings, pp. 644-647 (1995).

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