Method and apparatus for 3D interconnect

Details Method and apparatus for 3D interconnect Method and apparatus for 3D interconnect

2008-05-09

2011-12-13

Such, Matthew W (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21553, C257SE21585

Reexamination Certificate

active

08076237

ABSTRACT:
The present invention discloses methods for depositing a material, particularly a conductive material, in cavities of a substrate and forming bonding contacts or pads thereon. An intracavity structure may be utilized in conjunction with embodiments of the present invention to provide efficient filling of diverse cavities within the substrate. Also provided are embodiments for interconnection structures using filled cavities, along with electrically conductive or reactive structures which may include capacitors fabricated within a substrate.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 5855680 (1999-01-01), Soininen et al.
patent: 6013553 (2000-01-01), Wallace
patent: 6287965 (2001-09-01), Kang et al.
patent: 6342427 (2002-01-01), Choi et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6590251 (2003-07-01), Kang et al.
patent: 6627503 (2003-09-01), Ma et al.
patent: 6734090 (2004-05-01), Agarwala et al.
patent: 6824665 (2004-11-01), Shelnut et al.
patent: 6858547 (2005-02-01), Metzner
patent: 6875677 (2005-04-01), Conley, Jr. et al.
patent: 6930059 (2005-08-01), Conley, Jr. et al.
patent: 7053009 (2006-05-01), Conley, Jr. et al.
patent: 7071051 (2006-07-01), Jeon et al.
patent: 7129165 (2006-10-01), Basol et al.
patent: 7132360 (2006-11-01), Schaeffer et al.
patent: 7135421 (2006-11-01), Ahn et al.
patent: 7147766 (2006-12-01), Uzoh et al.
patent: 7172497 (2007-02-01), Basol et al.
patent: 7192824 (2007-03-01), Ahn et al.
patent: 7192892 (2007-03-01), Ahn et al.
patent: 7205247 (2007-04-01), Lee et al.
patent: 7235501 (2007-06-01), Ahn et al.
patent: 7312494 (2007-12-01), Ahn et al.
patent: 7393736 (2008-07-01), Ahn et al.
patent: 7402534 (2008-07-01), Mahajani
patent: 7405166 (2008-07-01), Liang et al.
patent: 7405454 (2008-07-01), Ahn et al.
patent: 7414281 (2008-08-01), Fastow
patent: 2002/0001974 (2002-01-01), Chan
patent: 2002/0064592 (2002-05-01), Datta et al.
patent: 2004/0144980 (2004-07-01), Ahn et al.
patent: 2004/0168627 (2004-09-01), Conley et al.
patent: 2004/0198069 (2004-10-01), Metzner et al.
patent: 2005/0023624 (2005-02-01), Ahn et al.
patent: 2005/0070123 (2005-03-01), Hirano
patent: 2005/0110069 (2005-05-01), Kil et al.
patent: 2005/0214457 (2005-09-01), Schmitt et al.
patent: 2005/0214458 (2005-09-01), Meiere
patent: 2005/0218462 (2005-10-01), Ahn et al.
patent: 2005/0271813 (2005-12-01), Kher et al.
patent: 2006/0013946 (2006-01-01), Park et al.
patent: 2006/0019033 (2006-01-01), Muthukrishnan et al.
patent: 2006/0046518 (2006-03-01), Hill et al.
patent: 2006/0051925 (2006-03-01), Ahn et al.
patent: 2006/0060930 (2006-03-01), Metz et al.
patent: 2006/0062910 (2006-03-01), Meiere
patent: 2006/0113675 (2006-06-01), Chang et al.
patent: 2006/0128168 (2006-06-01), Ahn et al.
patent: 2006/0148180 (2006-07-01), Ahn et al.
patent: 2006/0193979 (2006-08-01), Meiere et al.
patent: 2006/0208215 (2006-09-01), Metzner et al.
patent: 2006/0223301 (2006-10-01), Vanhaelemeersch et al.
patent: 2006/0228888 (2006-10-01), Lee et al.
patent: 2006/0257563 (2006-11-01), Doh et al.
patent: 2006/0258078 (2006-11-01), Lee et al.
patent: 2006/0266289 (2006-11-01), Verghese et al.
patent: 2007/0031599 (2007-02-01), Gschwandtner et al.
patent: 2007/0037412 (2007-02-01), Dip et al.
patent: 2007/0059948 (2007-03-01), Metzner et al.
patent: 2007/0065578 (2007-03-01), McDougall
patent: 2007/0066010 (2007-03-01), Ando
patent: 2007/0134942 (2007-06-01), Ahn et al.
patent: 2007/0232501 (2007-10-01), Tonomura
patent: 2007/0252244 (2007-11-01), Srividya et al.
patent: 2008/0054332 (2008-03-01), Kim et al.
patent: 2008/0057659 (2008-03-01), Forbes et al.
patent: 2008/0124908 (2008-05-01), Forbes et al.
patent: 2008/0176375 (2008-07-01), Erben et al.
patent: 2008/0224240 (2008-09-01), Ahn et al.
patent: 2008/0233288 (2008-09-01), Clark
patent: 2008/0261413 (2008-10-01), Mahajani
patent: 2008/0282970 (2008-11-01), Heys et al.
patent: 2009/0011608 (2009-01-01), Nabatame
PCT; International Search report and Written Opinion dated Nov. 12, 2010 in Application No. PCT/US2010/030126.
PCT; International Search report and Written Opinion dated Jan. 20, 2011 in Application No. PCT/US2010/045368.
Chang et al. Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric; IEEE Electron Device Letters; Feb. 2009; 133-135; vol. 30, No. 2; IEEE Electron Device Society.
Maeng et al. Electrical properties of atomic layer disposition Hf02 and Hf0xNy on Si substrates with various crystal orientations, Journal of the Electrochemical Society, Apr. 2008, p. H267-H271, vol. 155, No. 4, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea.

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