Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-03-21
1998-09-22
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438308, 438487, H01L 2100, H01L 21336
Patent
active
058113274
ABSTRACT:
In a substrate having an insulating surface in which an amorphous semiconductor film is deposited on the insulating surface, a predetermined under-heating portion of the amorphous semiconductor film is partially heated with a heating source emitting heating rays. While heating, the under-heating portion is shifted by moving the heating source or the substrate. Accordingly, the amorphous semiconductor film is sequentially heat-treated and polycrystallized. As the under-heating portion shifts, the polycrystallization sequentially proceeds using the already polycrystallized portion by irradiation with the heating rays, which is adjacent to the under-heating portion, as seed crystal. Thus, the growth condition of crystal grains is uniformly controlled in the shifting direction of the under-heating portion.
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Funai Takashi
Makita Naoki
Takayama Toru
Lebentritt Michael S.
Niebling John
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
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