Metamorphic buffer on small lattice constant substrates

Details Metamorphic buffer on small lattice constant substrates Metamorphic buffer on small lattice constant substrates

2005-03-10

2009-12-15

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S015000, C257S191000, C257S192000, C257SE29089, C257SE29072

Reexamination Certificate

active

07633083

ABSTRACT:
A semiconductor device is supported by a substrate with a smaller lattice constant. A metamorphic buffer provides a transition from the smaller lattice constant of the substrate to the larger lattice constant of the semiconductor device. In one application, the semiconductor device has a lattice constant of between approximately 6.1 and 6.35 angstroms, metamorphic buffer layers include Sb (e.g., AlInSb buffer layers), and the substrate has a smaller lattice constant (e.g., Si, InP or GaAs substrates).

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Pease, E. A., et al., “2.5-3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AlInSb metamorphic buffer layers,” Journal of Applied Physics, vol. 93, No. 6, Mar. 15, 2003, pp. 3177-3181.
Pease, E. A. et al., “Mid-IR Lasers on AlInSb Metamorphic Buffers,” Presentation at 2002 Electronics Materials Conference, 2002, 15 Pages.
Pease, E. A., “Mid-Infrared GaInSb/AlGaInSb MQW lasers on AlInSb metamorphic buffer layers,” Thesis, University of New Mexico, May 2003, 107 Pages.
Pease, E. A., “Optically Pumped AlGaInSb/GaInSb Multiple Quantum Well Lasers,” Proceedings, 2002 Electronics Materials Conference, Abstract D4, 2002, p. 7.

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