Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-01-14
1995-10-10
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257761, 257762, 257763, 257764, 257765, 257767, 257768, H01L 2348, H01L 2946, H01L 2954, H01L 2962
Patent
active
054573459
ABSTRACT:
A metallization composite comprises a refractory metal, nickel, and copper. The refractory metal is preferably titanium (Ti), but other suitable refractory metals such as zirconium and hafnium can also be utilized. An additional optional layer of gold can overlie the copper. The metallization composite is used to connect a solder contact to a semiconductor substrate.
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Cook Herbert C.
Farrar, Sr. Paul A.
Geffken Robert M.
Motsiff William T.
Wirsing Adolf E.
International Business Machines - Corporation
Jackson Jerome
Jr. Carl Whitehead
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