Metallic source line and drain plug with self-aligned contacts f

Details Metallic source line and drain plug with self-aligned contacts f Metallic source line and drain plug with self-aligned contacts f

1997-02-18

1998-09-29

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058148620

ABSTRACT:
Manufacture of an integrated circuit flash memory devices includes covering a semiconductor substrate with a tunnel oxide layer, a floating gate layer, an intergate dielectric layer, a control gate layer, a silicon dioxide dielectric layer over a silicon nitride layer. Then those layers over the tunnel oxide are patterned into flash memory gate electrode by etching through a source/drain mask followed by ion implanting source/drain dopant ions through the openings formed by etching. Sidewall spacers are formed followed by a dielectric layer through which source line openings are etched down to the source/drain regions. Plug openings are made down to the source/drain regions. An intermetal dielectric layer is deposited comprising PEOX/SOG/PEOX over the device. Then via openings are made over the drain plugs by etching the intermetal dielectric layer through a via mask. Next metal is deposited over the intermetal dielectric layer into the via openings extending down into contact with the drain plugs.

REFERENCES:
patent: 5204286 (1993-04-01), Doan
patent: 5231051 (1993-07-01), Baldi et al.
patent: 5270240 (1993-12-01), Lee
patent: 5282160 (1994-01-01), Yamagata
patent: 5312781 (1994-05-01), Gregor et al.
patent: 5401992 (1995-03-01), Ono
patent: 5416349 (1995-05-01), Bergemont
patent: 5500816 (1996-03-01), Kobayashi
patent: 5517044 (1996-05-01), Koyama

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