Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-15
2007-05-15
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S691000, C977S842000, C977S843000, C257SE21495
Reexamination Certificate
active
10816576
ABSTRACT:
A method for fabricating an electrical interconnect between two or more electrical components. A conductive layer is provided on a substarte and a thin, patterned catalyst array is deposited on an exposed surface of the conductive layer. A gas or vapor of a metallic precursor of a metal nanowire (MeNW) is provided around the catalyst array, and MeNWs grow between the conductive layer and the catalyst array. The catalyst array and a portion of each of the MeNWs are removed to provide exposed ends of the MeNWs.
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Li Jun
Meyyappan Meyya
Ng Hou Tee
Cox Diana N.
Nguyen Thanh
Padilla Robert M.
Schipper John F.
The United States of America as represented by the Administrator
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