Metallic interconnect pad, and integrated circuit structure usin

Details Metallic interconnect pad, and integrated circuit structure usin Metallic interconnect pad, and integrated circuit structure usin

1996-09-06

1998-08-18

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

257764, 257762, 257766, 257780, H01L 2348, H01L 2352, H01L 2940

Patent

active

057961689

ABSTRACT:
Reduced undercutting of a titanium-tungsten layer in a ball limiting metallurgy (BLM) is achieved in the preparation of solder ball interconnect structures by removing metal oxide film which forms on the titanium-tungsten layer and etching the titanium-tungsten layer in different steps. Removing the metal oxide with an acid solution prior to etching the titanium-tungsten layer provides for a more uniform etch of the titanium-tungsten layer.

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