Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-31
2011-10-25
Gurley, Lynne A. (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S327000, C438S625000, C257S751000, C257SE23141
Reexamination Certificate
active
08043962
ABSTRACT:
A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.
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patent: 2002/0121703 (2002-09-01), Toyoda et al.
patent: 2008/0012133 (2008-01-01), Shih et al.
patent: 2008/0081473 (2008-04-01), Suzuki
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Hwang Sun Woo
Jung Dong Ha
Kim Baek Mann
Kim Jeong Tae
Kim Soo Hyun
Gurley Lynne A.
Hynix / Semiconductor Inc.
Im Junghwa M
Ladas & Parry LLP
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