Metal structure with sidewall passivation and method

Details Metal structure with sidewall passivation and method Metal structure with sidewall passivation and method

2005-02-18

2008-11-04

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S597000, C438S639000, C257S773000, C257S776000

Reexamination Certificate

active

07446047

ABSTRACT:
A passivated metal structure and a method of forming the metal structure is disclosed. According to one embodiment, the patterned metal structure, such as conductive lines, are formed on a substrate. The copper lines are passivated by a polymer liner between the copper lines and a low k dielectric filling the spaces between the conductive lines. The polymer liner is preferably deposited on the sidewalls of the conductive lines by electro-grafting. The polymer liner may also be used in a damascene process according to a second embodiment.

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