Metal region for reduction of capacitive coupling between...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S183000, C438S618000, C438S923000, C438S926000

Reexamination Certificate

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06951806

ABSTRACT:
A structure includes a substrate, first and second signal lines above the substrate, where unused substrate surface area exists between the first and second signal lines, and a first shield line in the unused substrate surface area. To define the first shield line, the signal line layout which includes the first and second signal lines is defined. Any areas which are not signal lines are then defined as unused areas of the substrate. The shield lines including the first shield line are then defined in portions of the unused areas of the substrate. In this manner, shield lines are automatically designed at every available location without requiring any allocation of substrate surface area.

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