Metal reduction in wafer scribe area

Details Metal reduction in wafer scribe area Metal reduction in wafer scribe area

2005-10-04

2005-10-04

Smith, Brad (Department: 2829)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S460000, C438S110000

Reexamination Certificate

active

06951801

ABSTRACT:
A process for removing metal from a scribe area of a semiconductor wafer. The metal removed may include exposed metal in a saw path of the scribe area and the metal in a crack stop trench of the scribe area. In one example, copper is removed from the scribe area by wet etching the wafer. In one example, the wet etching process is performed after the removal of an exposed barrier adhesion layer on the wafer surface. Removal of the metal in the saw path may reduce the amount of metal buildup on a saw blade during singulation of the die areas of a wafer.

REFERENCES:
patent: 6271578 (2001-08-01), Mitwalsky et al.
patent: 6362524 (2002-03-01), Blish et al.
patent: 2003/0197289 (2003-10-01), Lin
patent: 2004/0219766 (2004-11-01), Headley et al.
“Construction Analysis, IBM PowerPC 750 RISC Microprocessor (Copper) with TEM Analysis,” Report Number SCA 9808-587, Integrated Circuit Engineering, Scottsdale, Arizona.

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